Search results for "p-type implantation"

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

2019

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30-200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10(20) at/cm(3). The implanted samples were annealed at high temperatures (1675-1825 degrees C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 degrees C, while this increase becomes more significant at 1825 degrees C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65-1.34 x 10(18)/cm(3) and m…